AOD490
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
The AOD490 uses advanced trench ...
AOD490
N-Channel Enhancement Mode Field Effect
Transistor
SRFET TM
General Description
The AOD490 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
-RoHS Compliant -Halogen Free*
Features
VDS (V) = 30V ID =40A (VGS = 10V) RDS(ON) < 6.8mΩ (VGS = 10V) RDS(ON) < 8.3mΩ (VGS = 4.5V)
100% UIS Tested! 100% Rg Tested!
Top View D
TO-252 D-PAK Bottom View
D
SRFETTM Soft Recovery MOSFET: G Integrated
Schottky Diode
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B
TC=100°C G
Pulsed Drain Current C
ID IDM
Continuous Drain TA=25°C
CurrentA
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
S
Maximum 30 ±12 40 31 100 15 12 30 135 63 31 2.5 1.6
-55 to 175
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 15 41 2
Max 20 50 2.4
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AOD490
Electrical Characteristics (TJ=25°C unless otherwise noted)
Sym...
