AOD492

AOD492 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description SRFET TM AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen Free* Features VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 4.4mΩ (VGS = 10V) RDS(ON) < 6.2mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO-252 D-PAK Bottom View D SRFETTM Soft Recovery MOSFET: G Integrated Schottky Diode GS SG S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C H Current B TC=100°C Pulsed Drain CurrentC Avalanche Current C Repetitive avalanche energy L=0.3mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 66 200 30 135 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 39 0.8 Max 20 50 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD492 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ M...