AOD492 N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
SRFET TM AOD492 uses advanced tr...
AOD492 N-Channel Enhancement Mode Field Effect
Transistor
SRFET TM
General Description
SRFET TM AOD492 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
-RoHS Compliant -Halogen Free*
Features
VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 4.4mΩ (VGS = 10V) RDS(ON) < 6.2mΩ (VGS = 4.5V)
100% UIS Tested! 100% Rg Tested!
Top View D
TO-252 D-PAK Bottom View
D
SRFETTM Soft Recovery MOSFET: G Integrated
Schottky Diode
GS
SG
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C H
Current B
TC=100°C
Pulsed Drain CurrentC
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID IDM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±20
85
66 200 30 135 100 50 2.5 1.6 -55 to 175
Units V V
A
A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 14 39 0.8
Max 20 50 1.5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD492
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ M...