AOL1422

AOL1422 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1422 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use in load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* Ultra SO-8TM Top View Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5.4mΩ (VGS = 4.5V) Rg,Ciss,Coss,Crss Tested D S G D Bottom tab connected to drain G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current G TA=25°C TA=70°C IDSM TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 85 150 19 15 100 50 2.08 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 19.6 50 0.9 Max 25 60 1.5 Alpha & Omega Semiconductor, Ltd. Units V V A W °C Units °C/W °C/W °C/W www.aosmd.com AOL1422 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 3...