N-Channel MOSFET. AOL1424 Datasheet

AOL1424 MOSFET. Datasheet pdf. Equivalent

Part AOL1424
Description N-Channel MOSFET
Feature AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1424 uses adv.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AOL1424 N-Channel Enhancement Mode Field Effect Transistor AOL1424 Datasheet
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AOL1424
AOL1424
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1424 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V,while
retaining a 20V VGS(MAX) rating. It is ESD
protected.This device is suitable for use as a load
switch.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
VDS (V) = 30V
ID = 70A (VGS = 10V)
RDS(ON) < 6.5m(VGS = 10V)
RDS(ON) < 9.8m(VGS = 4.5V)
ESD Protected
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S
G
D
Bottom tab
connected to
drain
G
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current A
Avalanche Current H
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH H
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
70
50
120
15
12
30
135
50
25
2.2
1.5
-55 to 175
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
45
2.5
Max
24
55
3.0
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AOL1424
AOL1424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±16V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
Min
30
1.4
120
Typ Max Units
V
1
µA
5
10 µA
1.8 2.5
V
A
5.3 6.5
m
7.4 8.9
7.8 9.8 m
67 S
0.7 1.0
V
70 A
1803
387
238
1.3
2170
2
pF
pF
pF
36 48 nC
19 nC
3.9 nC
8.7 nC
7.6 ns
6.4 ns
27 ns
8.5 ns
27 33 ns
17 nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
H. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev6: Marchl 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





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