AOL1424 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1424 uses advanced trench technol...
AOL1424 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOL1424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD protected.This device is suitable for use as a load switch.
-RoHS Compliant -Halogen and Antimony Free Green Device*
Features
VDS (V) = 30V ID = 70A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 9.8mΩ (VGS = 4.5V)
ESD Protected UIS Tested Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S G
D
Bottom tab connected to drain
G
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain Current A
Avalanche Current H
TA=25°C TA=70°C
Repetitive avalanche energy L=0.3mH H
IDSM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±20 70 50 120 15 12 30 135 50 25 2.2 1.5
-55 to 175
D S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 20 45 2.5
Max 24 55 3.0
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1424
Electrical Characteristics (TJ=25°C unless otherwise note...