N-Channel MOSFET. AOL1434A Datasheet

AOL1434A MOSFET. Datasheet pdf. Equivalent

Part AOL1434A
Description N-Channel MOSFET
Feature AOL1434A N-Channel SDMOSTM POWER Transistor General Description The AOL1434A is fabricated with SDM.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOL1434A Datasheet

AOL1434A N-Channel SDMOSTM POWER Transistor General Descrip AOL1434A Datasheet
Recommendation Recommendation Datasheet AOL1434A Datasheet




AOL1434A
AOL1434A
N-Channel SDMOSTM POWER Transistor
General Description
The AOL1434A is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge. The result is outstanding efficiency with
controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
-RoHS Compliant
-Halogen Free
Features
VDS (V) = 25V
ID = 50A
RDS(ON) < 5m
RDS(ON) <10m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested!
100% R g Tested!
UltraSO-8TM Top View
S
G
D
Bottom tab
connected to
drain
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain CurrentC
ID
IDM
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=50uH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
50
43
100
16
13
50
63
30
15
2
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
48
3.5
Max
20
60
5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AOL1434A
AOL1434A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
25
V
IDSS Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
TJ=55°C
10
50
µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2 1.9 2.5
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
TJ=125°C
4
6
5
8
m
VGS=4.5V, ID=20A
7.7 10 m
gFS Forward Transconductance
VDS=5V, ID=30A
65 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1.0
V
IS Maximum Body-Diode Continuous Current
40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1500
340
200
1.1
1800
445
285
1.6
2200
580
400
2.4
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=12.5V, ID=30A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=12.5V,
tD(off)
Turn-Off DelayTime
RL=0.42, RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs
25 31 40
12 15 20
3.5 4.8
7
6.5 8.9 13
8
10.4
29
9
9.5 12 15
17 21 26
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
The SOA curve provides a single pulse rating.
Rev0:July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)