AOL1700 N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
SRFET TM AOL1700 use...
AOL1700 N-Channel Enhancement Mode Field Effect
Transistor
SRFET TM
General Description
Features
SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
-RoHS Compliant -Halogen and Antimony Free Green Device*
VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 6.0mΩ (VGS = 4.5V)
UIS Tested! Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S G
D
Bottom tab connected to drain
D
SRFET TM Soft Recovery MOSFET: Integrated
Schottky Diode
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C H
Current B
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain Current A Avalanche Current C
TA=25°C TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±20
85
81 200 17 13 30 135 100 50 2.1 1.3 -55 to 175
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 19.6 50
1
Max 25 60 1.5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
A...