AOL1700

AOL1700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 6.0mΩ (VGS = 4.5V) UIS Tested! Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View S G D Bottom tab connected to drain D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C H Current B TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current A Avalanche Current C TA=25°C TA=70°C Repetitive avalanche energy L=0.3mH C IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 81 200 17 13 30 135 100 50 2.1 1.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 19.6 50 1 Max 25 60 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com A...