AOL1702

AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* Features VDS (V) = 30V ID =70A (VGS = 10V) RDS(ON) < 5.8mΩ (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View S G D Bottom tab connected to drain G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C G Current B TC=100°C Pulsed Drain Current C ID IDM Continuous Drain CurrentA Avalanche Current C TA=25°C TA=70°C Repetitive avalanche energy L=0.3mH C IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S Maximum 30 ±12 70 52 100 14 11 30 135 58 29 2.1 1.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 50 2.1 Max 25 60 2.6 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1702 E...