N-Channel MOSFET. AOL1704 Datasheet

AOL1704 MOSFET. Datasheet pdf. Equivalent

Part AOL1704
Description N-Channel MOSFET
Feature AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description SRFET TM AO.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AOL1704 N-Channel Enhancement Mode Field Effect Transistor S AOL1704 Datasheet
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AOL1704
AOL1704
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
SRFET TM AOL1704 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
VDS (V) = 30V
ID =50A (VGS = 10V)
RDS(ON) < 7.8m(VGS = 10V)
RDS(ON) < 9.8m(VGS = 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S
G
D
Bottom tab
connected to
drain
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°CI
Current B
TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain TA=25°C
Current H
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Maximum
30
±12
50
43
120
12
10
25
94
50
25
2.0
1.3
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
53
2.4
Max
29
64
3.0
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AOL1704
AOL1704
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
TJ=125°C
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode + Schottky Diode Continuous Current I
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
30
1.4
120
0.04 0.1
5 20
0.1
1.8 2.4
6.5 7.8
9.2 11.5
8 9.8
95
0.36 0.5
50
2800
390
145
0.8
3640
1.2
42 50
19 23
7
6
7
7
31
5
13 16
12
V
mA
µA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using t 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
I. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev2: July. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





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