N-Channel MOSFET. AOL1708 Datasheet

AOL1708 MOSFET. Datasheet pdf. Equivalent

Part AOL1708
Description N-Channel MOSFET
Feature AOL1708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features .
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOL1708 Datasheet

AOL1708 N-Channel Enhancement Mode Field Effect Transistor S AOL1708 Datasheet
Recommendation Recommendation Datasheet AOL1708 Datasheet




AOL1708
AOL1708
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
The AOL1708 uses advanced trench technology with a
monolithically integrated Schottky diode to provide excellent
RDS(ON),and low gate charge. This device is suitable for use
as a low side FET in SMPS, load switching and general
purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
VDS (V) = 30V
ID =70A
(VGS = 10V)
RDS(ON) < 5.9m(VGS = 10V)
RDS(ON) < 9.5m(VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S
G
D
Bottom tab
connected to
drain
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
CurrentA
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Maximum
30
±20
70
60
180
15
12.0
25
94
71
36
2.1
1.3
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
50
1.5
Max
25
60
2.1
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AOL1708
AOL1708
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
Conditions
ID=250uA, VGS=0V
VDS=30V, VGS=0V
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Min
30
TJ=125°C
1.3
180
TJ=125°C
Typ
1.55
5.2
7.8
7.6
55
0.37
Max Units
V
0.1
mA
20
0.1 µA
2V
A
5.9
m
9.8
9.5 m
S
0.5 V
65 A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
SWITCHING PARAMETERS
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2154
474
185
0.75
2650
1.1
pF
pF
pF
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
37 45
17.8
6.6
7.6
6.8
7.2
25.2
5.8
12 18
10.5
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady-state junction-to-ambient thermal
resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if
the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev1:July. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)