AOL1712

AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS (V) = 30V ID =65A RDS(ON) < 4.2mΩ RDS(ON) < 5.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D D S G Bottom tab connected to drain G Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain TC=25°C Current B, H TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current A TA=70°C Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C ID IDM IDSM IAR EAR PD PDSM Junction and Storage Temperature Range TJ, TSTG SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S Maximum 30 ±12 65 65 80 16 12 38 217 100 50 2.1 1.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 19.6 50 1 Max 25 60 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com ...