N-Channel MOSFET. AON3702 Datasheet

AON3702 MOSFET. Datasheet pdf. Equivalent


Part AON3702
Description N-Channel MOSFET
Feature General Description SRFETTM AON3702 uses advanced trench technology with a monolithically integrated.
Manufacture Alpha & Omega Semiconductors
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General Description SRFETTM AON3702 uses advanced trench tec AON3702 Datasheet
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AON3702
General Description
SRFETTM AON3702 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
AON3702
30V N-Channel MOSFET
SRFET TM
Product Summary
VDS (V) = 30V
ID =11A (VGS = 10V)
RDS(ON) < 14.5m(VGS = 10V)
RDS(ON) < 18m(VGS = 4.5V)
100% Rg Tested
Top View
DFN 3x3
Bottom View
Pin 1
Top View
18
27
3 6G
45
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
IDSM
IDM
Power Dissipation
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
11
9
60
3.1
2
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
30
65
20
Max
40
80
25
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AON3702
AON3702
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
IDSS
IGSS
VGS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
TJ=125°C
ID(ON)
On state drain current
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, VDS=5V
VGS=10V, ID=11A
VGS=4.5V, ID=10A
TJ=125°C
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=5V, ID=11A
IS=1A,VGS=0V
IS Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=11A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.4,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=11A, dI/dt=300A/µs
Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=300A/µs
30
1.5
60
0.01 0.1
4 10
0.1
1.9 2.4
12 14.5
19 24
15 18
64
0.38 0.5
5.0
1450
224
92
1.6
1885
3.0
24.0 31
12.0
3.9
4.2
5.5
4.7
24.0
4.0
10 12
6.8
V
mA
µA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are
based on TJ(MAX)=150°C, using t 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1:Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.







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