N-Channel MOSFET
AOT470/AOB470L
75V N-Channel MOSFET
General Description
Product Summary
The AOT470/AOB470L uses advanced trench techn...
Description
AOT470/AOB470L
75V N-Channel MOSFET
General Description
Product Summary
The AOT470/AOB470L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
75V 100A < 10.5mΩ
100% UIS Tested 100% Rg Tested
Top View D
TO220 Bottom View
D
Top View
TO-263 D2PAK
Bottom View
D D
D
G DS
G SD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S G
Maximum 75 ±25 100 78 200 10 8 45 300 268 134 2.1 1.3
-55 to 175
G S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 10 45 0.45
Max 12 60 0.56
G S
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev2: Mar 2012
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AOT470/AOB470L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Vol...
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