AO3422

AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Features VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 4.5V) RDS(ON) < 200mΩ (VGS = 2.5V) SOT23 Top View Bottom View DD D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 55 ±12 2.1 1.7 10 1.25 0.8 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 75 115 48 Max 100 150 60 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3422 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=10mA, VGS=0V VDS=44V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Source leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VG...