AO3422 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3422 uses advanced trench technolog...
AO3422 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch.
Features
VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 4.5V) RDS(ON) < 200mΩ (VGS = 2.5V)
SOT23
Top View
Bottom View
DD
D
S G
G S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
Power Dissipation
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 55 ±12 2.1 1.7 10 1.25 0.8
-55 to 150
Units V V
A
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 75 115 48
Max 100 150 60
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO3422
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=10mA, VGS=0V VDS=44V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Gate-Source leakage current Gate Threshold Voltage On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VG...