N-Channel MOSFET
AO3424
30V N-Channel MOSFET
General Description
Product Summary
The AO3424 uses advanced trench technology to provide...
Description
AO3424
30V N-Channel MOSFET
General Description
Product Summary
The AO3424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V)
30V 3.8A < 55mΩ < 65mΩ < 85mΩ
SOT23
Top View
Bottom View
D D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G S
Maximum 30 ±12 3.8 3.1 15 1.4 0.9
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 70 100 63
Max 90 125 80
Units V V
A
W °C
Units °C/W °C/W °C/W
Rev 4: January 2011
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AO3424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=30V, VGS=0V
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.8A
RDS(ON)
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