N-Channel MOSFET. AO3420 Datasheet

AO3420 MOSFET. Datasheet pdf. Equivalent

Part AO3420
Description N-Channel MOSFET
Feature AO3420 20V N-Channel MOSFET General Description Product Summary The AO3420 uses advanced trench t.
Manufacture Alpha & Omega Semiconductors
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AO3420
AO3420
20V N-Channel MOSFET
General Description
Product Summary
The AO3420 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS=2.5V)
RDS(ON) (at VGS=1.8V)
20V
6A
< 24m
< 27m
< 42m
< 55m
SOT23
Top View
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
20
±12
6
5
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.2. 0: August 2013
www.aosmd.com
Page 1 of 5



AO3420
AO3420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
ID=250µA, VGS=0V
VDS=20V, VGS=0V
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, ID=6A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
Forward Transconductance
VDS=5V, ID=6A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
20
0.4
V
1
µA
5
±100 nA
0.75 1.1
V
16 24
m
23 35
18 27 m
23 42 m
31 55 m
25 S
0.7 1
V
2A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
420 525 630
65 95 125
45 75 105
0.8 1.7 2.6
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12.5 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=6A
6 nC
1 nC
Qgd Gate Drain Charge
2 nC
tD(on)
Turn-On DelayTime
3 ns
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=1.7, 7.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
20 ns
tf Turn-Off Fall Time
6 ns
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs
14 ns
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2. 0: August 2013
www.aosmd.com
Page 2 of 5





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