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AO3420 Dataheets PDF



Part Number AO3420
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AO3420 DatasheetAO3420 Datasheet (PDF)

AO3420 20V N-Channel MOSFET General Description Product Summary The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) 20V 6A < 24mΩ < 27mΩ < 42mΩ < 55mΩ SOT23 Top View Bottom Vie.

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AO3420 20V N-Channel MOSFET General Description Product Summary The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) 20V 6A < 24mΩ < 27mΩ < 42mΩ < 55mΩ SOT23 Top View Bottom View D D D SG GS Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 20 ±12 6 5 30 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 70 100 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev.2. 0: August 2013 www.aosmd.com Page 1 of 5 AO3420 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage ID=250µA, VGS=0V VDS=20V, VGS=0V VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, ID=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=2A Forward Transconductance VDS=5V, ID=6A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C 20 0.4 V 1 µA 5 ±100 nA 0.75 1.1 V 16 24 mΩ 23 35 18 27 mΩ 23 42 mΩ 31 55 mΩ 25 S 0.7 1 V 2A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 420 525 630 65 95 125 45 75 105 0.8 1.7 2.6 pF pF pF Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.5 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=10V, ID=6A 6 nC 1 nC Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time VGS=10V, VDS=10V, RL=1.7Ω, 7.5 ns tD(off) Turn-Off DelayTime RGEN=3Ω 20 ns tf Turn-Off Fall Time 6 ns trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 14 ns Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 6 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency .


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