Document
AO3420
20V N-Channel MOSFET
General Description
Product Summary
The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V)
20V 6A < 24mΩ < 27mΩ < 42mΩ < 55mΩ
SOT23
Top View
Bottom View
D D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G S
Maximum 20 ±12 6 5 30 1.4 0.9
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 70 100 63
Max 90 125 80
Units V V
A
W °C
Units °C/W °C/W °C/W
Rev.2. 0: August 2013
www.aosmd.com
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AO3420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current Gate Threshold Voltage
ID=250µA, VGS=0V VDS=20V, VGS=0V
VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, ID=6A
RDS(ON)
gFS VSD IS
Static Drain-Source On-Resistance VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
Forward Transconductance
VDS=5V, ID=6A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C TJ=125°C
20 0.4
V
1 µA
5
±100 nA
0.75 1.1
V
16 24 mΩ
23 35
18 27 mΩ
23 42 mΩ
31 55 mΩ
25 S
0.7 1
V
2A
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
420 525 630 65 95 125 45 75 105 0.8 1.7 2.6
pF pF pF Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12.5 nC
Qg(4.5V) Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=6A
6 nC 1 nC
Qgd Gate Drain Charge
2 nC
tD(on)
Turn-On DelayTime
3 ns
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=1.7Ω, 7.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
20 ns
tf Turn-Off Fall Time
6 ns
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs
14 ns
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency .