AOTF470 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOTF470 uses advanced trench technol...
AOTF470 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOTF470 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -RoHs Compliant
Features
VDS (V) = 75V
ID= 50 A
(VGS= 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
D
G DS
AOTF470 TO-220F
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID IDM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics Parameter
Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol RθJA RθJC
AOTF470 75 ±25 50 36 200 45 300 54 27
-55 to 175
AOTF470 60 2.8
Units V V
A
A mJ W °C
Units °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOTF470
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250uA, VGS=0V VDS=60V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A
gFS Transconductanc...