AOTF470

AOTF470 N-Channel Enhancement Mode Field Effect Transistor General Description The AOTF470 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -RoHs Compliant Features VDS (V) = 75V ID= 50 A (VGS= 10V) RDS(ON) < 11.5mΩ (VGS = 10V) D G DS AOTF470 TO-220F G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol RθJA RθJC AOTF470 75 ±25 50 36 200 45 300 54 27 -55 to 175 AOTF470 60 2.8 Units V V A A mJ W °C Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOTF470 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250uA, VGS=0V VDS=60V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A gFS Transconductanc...