NPN Silicon Phototransistors
Types OP800SL thru OP805SL
Electrical Characteristics (TA= 25' C unless otherwise noted)
SYMBOL
PARAMETER
I I c ( o ...
Description
Types OP800SL thru OP805SL
Electrical Characteristics (TA= 25' C unless otherwise noted)
SYMBOL
PARAMETER
I I c ( o ~ ) On-State Collector Current
MIN TYP MAX UNITS
OP800SL 0.5 OP801SL 0.5
1 3.0
mA mA
TEST CONDITIONS
ICEO Collector Dark Current V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO Collector-Base Breakdown Voltage
I V(BR)ECO Emitter-Collector Breakdown Voltage
1 V(BR)EBO Emitter-Base Breakdown Voltage
1 VCE(SAT) Collector-Emitter Saturation Voltage
I 1tr Rise Time tf Fall Time
30 30 5.0 5.0
100 nA V C E = I O V , E ~ = O
V. l c = 1 0 0 p A
V lc=100pA
V I~=100pA
I
V I~=100pA
I
I0.40 V Ic = 0.4 mA, Ee= 5 m ~ / c m ~ ( ~ )
ps Vcc = 5 V, Ic = 0.80 mA, ps RL = I 0 0 R, See Test Circuit
Typical Performance Curves
Collector Dark Current vs. Ambient Temperature
- VCE= IOV
/
Normalized Collector Current vs. Ambient Temperature
Collector Current vs. lrradiance
-I
VCE 5.0 V
- LIGHT SOURCE IS UNFILTERED-
TUNGSTEN AT 2870°K
I 0 20 40 60 80 100 120 140
TA - AMBIENT TEMPERATURE - C'
Rise and Fall Time vs. Load Resistance
-vcc 5 v - -VRL 1 v -FREOUENCY 100 Hz -PULSE WIDTH 1 ms --LED OP290C -X 890 ,nm
-
0 2.000 6.000 10,000
-RL LOAD RESISTANCE - Ohms
- -- 5 0 - 2 5 0 25 50 75 100 125
TA AMBIENT TEMPERATURE C'
Normalized Collector Current vs. Angular Displacement
TEST CONOITIONS:
-' X 890 nm
-.IF 100 mA -VCE 5 V -.LENS TO LENS
,DISTANCE 6'
\I
\I
\I
J
*' 4
L
I
45 30 15 0 15 30
- -9 ANGULAR DISPLACEMENT Oeg.
J
45
/
0 4 8 12 16 20 24
E, - IRRAO...
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