PNP Transistor. A1015L Datasheet

A1015L Transistor. Datasheet pdf. Equivalent

Part A1015L
Description Silicon PNP Transistor
Feature 2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency .
Manufacture Toshiba Semiconductor
Datasheet
Download A1015L Datasheet

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (P A1015L Datasheet
Recommendation Recommendation Datasheet A1015L Datasheet




A1015L
2SA1015(L)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
Complementary to 2SC1815 (L)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC
150
mA
Base current
IB 50 mA
Collector power dissipation
PC 400 mW
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55~125
°C
JEDEC
JEITA
TO-92
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
temperature/current/voltage and the significant change in temperature,
2-5F1B
etc.) may cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.)
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
ICBO
VCB = −50 V, IE = 0
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
DC current gain
hFE (1)
(Note)
VCE = −6 V, IC = −2 mA
hFE (2) VCE = −6 V, IC = −150 mA
Collector-emitter saturation voltage
VCE (sat) IC = −100 mA, IB = −10 mA
Base-emitter saturation voltage
VBE (sat) IC = −100 mA, IB = −10 mA
Transition frequency
fT VCE = −10 V, IC = −1 mA
Collector output capacitance
Cob
VCB = −10 V, IE = 0
f = 1 MHz
Base intrinsic resistance
rbb’
VCB = −10 V, IE = 1 mA
f = 30 MHz
Noise figure
NF (1)
NF (2)
VCE = −6 V, IC = −0.1 mA
f = 100 Hz, RG = 10 kΩ
VCE = −6 V, IC = −0.1 mA
f = 1 kHz, RG = 10 kΩ
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 400
25 80
⎯ −0.1 0.3 V
⎯ ⎯ −1.1 V
80 ⎯ ⎯ MHz
4
7 pF
30
Ω
0.5
6
dB
0.2
3
1 2007-11-01



A1015L
2SA1015(L)
2 2007-11-01





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)