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CPH6443 Dataheets PDF



Part Number CPH6443
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet CPH6443 DatasheetCPH6443 Datasheet (PDF)

CPH6443 Power MOSFET 35V, 37mΩ, 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance Typical Applications • DC/DC Converter • Current Balance Switch for Backligh.

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CPH6443 Power MOSFET 35V, 37mΩ, 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance Typical Applications • DC/DC Converter • Current Balance Switch for Backlight SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 35 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 6 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 24 A Power Dissipation When mounted on ceramic substrate (1200mm2 × 0.8mm) Junction Temperature PD Tj 1.6 W 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (1200mm2 × 0.8mm) Symbol RθJA Value Unit 78.1 °C/W www.onsemi.com VDSS 35V RDS(on) Max 37mΩ@ 10V 61mΩ@ 4.5V 73mΩ@ 4V ID Max 6A ELECTRICAL CONNECTION N-Channel 1, 2, 5, 6 1 : Drain 2 : Drain 3 3 : Gate 4 : Source 5 : Drain 6 : Drain 4 PACKING TYPE : TL MARKING ZV LOT No. TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 September 2015 - Rev. 2 1 Publication Order Number : CPH6443/D CPH6443 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance V(BR)DSS IDSS IGSS VGS(th) gFS RDS(on)1 RDS(on)2 RDS(on)3 Ciss ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=10V ID=1.5A, VGS=4.5V ID=1.5A, VGS=4V 35 V 1 μA ±10 μA 1.2 2.6 V 2.9 S 28 37 mΩ 43 61 mΩ 52 73 mΩ 470 pF Output Capacitance Reverse Transfer Capacitance Coss Crss VDS=20V, f=1MHz 70 pF 35 pF Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge td(on) tr td(off) tf Qg See specified Test Circuit 8 ns 17 ns 32 ns 22 ns 10 nC Gate to Source Charge Gate to Drain “Miller” Charge Qgs VDS=20V, VGS=10V, ID=6A Qgd 2 nC 2 nC Forward Diode Voltage VSD IS=6A, VGS=0V 0.84 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VIN 10V 0V VIN PW=10μs D.C.≤1% G VDD=20V ID=3A RL=6.7Ω D VOUT CPH6443 P.G 50Ω S www.onsemi.com 2 CPH6443 www.onsemi.com 3 CPH6443 www.onsemi.com 4 PACKAGE DIMENSIONS unit : mm CPH6 CASE 318BD ISSUE O CPH6443 Recommended Soldering Footprint 0.6 1.4 2.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.95 0.95 ORDERING INFORMATION Device CPH6443-TL-H CPH6443-TL-W Marking ZV Package CPH6 (Pb-Free / Halogen Free) Shipping (Qty / Packing) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the CPH6443 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical exp.


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