Power MOSFET. MCH6341 Datasheet

MCH6341 MOSFET. Datasheet pdf. Equivalent

Part MCH6341
Description Power MOSFET
Feature Ordering number : ENA1272B MCH6341 Power MOSFET –30V, 59mΩ, –5A, Single P-Channel http://onsemi.co.
Manufacture ON Semiconductor
Datasheet
Download MCH6341 Datasheet

Ordering number : ENA1272A MCH6341 SANYO Semiconductors DA MCH6341 Datasheet
Ordering number : ENA1272B MCH6341 Power MOSFET –30V, 59mΩ, MCH6341 Datasheet
Recommendation Recommendation Datasheet MCH6341 Datasheet




MCH6341
Ordering number : ENA1272B
MCH6341
Power MOSFET
–30V, 59m, –5A, Single P-Channel
http://onsemi.com
Features
Low RDS(on)
Pb-free and RoHS Compliance
4V drive
ESD diode-Protected gate
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
--30
±20
--5
--20
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7022A-009
2.0
654
0.15 MCH6341-TL-E
MCH6341-TL-H
MCH6341-TL-W
0 to 0.02
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
YQ
1 23
0.65 0.3
123
654
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
MCPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72814HK TC-00002819/62012TKIM/73008TIIM PE No. A1272-1/5



MCH6341
MCH6341
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3A
ID=--3A, VGS=--10V
ID=--1.5A, VGS=--4.5V
ID=--1.5A, VGS=--4V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--5A
IS=--5A, VGS=0V
min
--30
Ratings
typ
--1.2
2.8
4.8
45
71
82
430
105
75
7.5
26
45
35
10
2.0
2.5
--0.87
max
--1
±10
--2.6
59
100
115
--1.5
Unit
V
mA
mA
V
S
mW
mW
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --15V
ID= --3A
RL=5
D VOUT
MCH6341
P.G 50S
Ordering Information
Device
MCH6341-TL-E
MCH6341-TL-H
MCH6341-TL-W
Package
MCPH6
MCPH6
MCPH6
Shipping
3,000pcs./reel
3,000pcs./reel
3,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
Pb Free and Halogen Free
No. A1272-2/5





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