Power MOSFET. MCH6342 Datasheet

MCH6342 MOSFET. Datasheet pdf. Equivalent

Part MCH6342
Description Power MOSFET
Feature MCH6342 Power MOSFET –30V, 73mΩ, –4.5A, Single P-Channel This Power MOSFET is produced using ON Sem.
Manufacture ON Semiconductor
Datasheet
Download MCH6342 Datasheet

MCH6342 Power MOSFET –30V, 73mΩ, –4.5A, Single P-Channel Th MCH6342 Datasheet
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MCH6342
MCH6342
Power MOSFET
–30V, 73m, –4.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
Low On-Resistance
1.8V drive
High Speed Switching
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
DC/DC Converter
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30 V
Gate to Source Voltage
VGSS
±10 V
Drain Current (DC)
ID 4.5 A
Drain Current (Pulse)
PW 10μs, duty cycle 1%
IDP
18 A
Power Dissipation
When mounted on ceramic substrate
(1500mm2 × 0.8mm)
PD
1.5 W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1500mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
83.3 °C/W
www.onsemi.com
VDSS
30V
RDS(on) Max
73m@ 4.5V
99m@ 2.5V
155m@ 1.8V
ID Max
4.5A
ELECTRICAL CONNECTION
P-Channel
1, 2, 5, 6
3
4
PACKING TYPE : TL
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
MARKING
YR
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
July 2015 - Rev. 2
1
Publication Order Number :
MCH6342/D



MCH6342
MCH6342
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=4.5V
ID=1A, VGS=2.5V
ID=0.3A, VGS=1.8V
30 V
1 μA
±10 μA
0.4 1.3 V
3.4 5.8
S
56 73 mΩ
71 99 mΩ
95 155 mΩ
650 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=10V, f=1MHz
105 pF
83 pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
8.2 ns
28 ns
100 ns
60 ns
8.6 nC
Gate to Source Charge
Gate to Drain “Miller” Charge
Qgs VDS=15V, VGS=4.5V, ID=4.5A
Qgd
1.3 nC
2.4 nC
Forward Diode Voltage
VSD
IS=4.5A, VGS=0V
0.83
1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10μs
D.C.≤1%
G
VDD= --15V
ID= --2A
RL=7.5Ω
D VOUT
MCH6342
P.G 50Ω S
www.onsemi.com
2





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