Power MOSFET. MCH6444 Datasheet

MCH6444 MOSFET. Datasheet pdf. Equivalent


Part MCH6444
Description Power MOSFET
Feature MCH6444 Power MOSFET 35V, 98mΩ, 2.5A, Single N-Channel This Power MOSFET is produced using ON Semic.
Manufacture ON Semiconductor
Datasheet
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MCH6444 Power MOSFET 35V, 98mΩ, 2.5A, Single N-Channel This MCH6444 Datasheet
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MCH6444
MCH6444
Power MOSFET
35V, 98m, 2.5A, Single N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
Low On-Resistance
4V drive
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Load Switch
Motor Drive
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
35 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID 2.5 A
Drain Current (Pulse)
PW 10μs, duty cycle 1%
IDP
10 A
Power Dissipation
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Junction Temperature
PD
Tj
0.8 W
150 °C
Storage Temperature
Tstg
55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
156.2 °C/W
www.onsemi.com
VDSS
35V
RDS(on) Max
98m@ 10V
166m@ 4.5V
201m@ 4V
ID Max
2.5A
ELECTRICAL CONNECTION
N-Channel
1, 2, 5, 6
3
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
4 6 : Drain
PACKING TYPE : TL
MARKING
ZT
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
June 2015 - Rev. 2
1
Publication Order Number :
MCH6444/D



MCH6444
MCH6444
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.75A, VGS=4.5V
ID=0.75A, VGS=4V
35 V
1 μA
±10 μA
1.2 2.6 V
1.7 S
75 98 mΩ
118 166 mΩ
143 201 mΩ
186 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=20V, f=1MHz
36 pF
22 pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
4.2 ns
4.7 ns
15 ns
5.7 ns
4 nC
Gate to Source Charge
Gate to Drain “Miller” Charge
Qgs VDS=20V, VGS=10V, ID=2.5A
Qgd
0.9 nC
0.7 nC
Forward Diode Voltage
VSD
IS=2.5A, VGS=0V
0.86 1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=15V
ID=1.5A
RL=10Ω
D VOUT
MCH6444
P.G 50Ω S
www.onsemi.com
2







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