MCH6436

MCH6436 Power MOSFET 30V, 34mΩ, 6A, Single N-Channel www.onsemi.com Features Low On-Resistance 1.8V Drive High Speed Switching ESD Diode-Protected Gate Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (1500mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (1500mm2 × 0.8mm) Symbol RθJA Value 30 ±12 6 24 Unit V V A A 1.5 150 −55 to +150 W °C °C Value Unit 83.3 °C/W VDSS 30V RDS(on) Max 34mΩ@ 4.5V 49mΩ@ 2.5V 69mΩ@ 1.8V ID Max 6A Electrical Connection N-Channel 1, 2, 5, 6 1 : Drain 3 2 : Drain 3 : Gate 4 : Source 5 : Drain 4 6 : Drain LOT No. LOT No. Packing Type : TL Marking ZK TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : MCH6436/D Electrical Characteristics at Ta = 25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltag...