Power MOSFET. MCH6437 Datasheet

MCH6437 MOSFET. Datasheet pdf. Equivalent

Part MCH6437
Description Power MOSFET
Feature MCH6437 Power MOSFET 20V, 24mΩ, 7A, Single N-Channel www.onsemi.com Features • Low On-Resistance •.
Manufacture ON Semiconductor
Datasheet
Download MCH6437 Datasheet

www.DataSheet.co.kr Ordering number : ENA1776 MCH6437 SAN MCH6437 Datasheet
MCH6437 Power MOSFET 20V, 24mΩ, 7A, Single N-Channel www.on MCH6437 Datasheet
Recommendation Recommendation Datasheet MCH6437 Datasheet




MCH6437
MCH6437
Power MOSFET
20V, 24m, 7A, Single N-Channel
www.onsemi.com
Features
Low On-Resistance
1.8V Drive
ESD Diode-Protected Gate
Pb-Free and RoHS Compliance
VDSS
20V
RDS(on) Max
24m@ 4.5V
35m@ 2.5V
65m@ 1.8V
ID Max
7A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
Drain Current (DC)
VGSS
ID
Drain Current (Pulse)
PW10μs, duty cycle1%
IDP
Power Dissipation
When mounted on ceramic substrate
(1200mm2 × 0.8mm)
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1200mm2 × 0.8mm)
Symbol
RθJA
Value
20
±12
7
28
Unit
V
V
A
A
1.5
150
55 to +150
W
°C
°C
Value
Unit
83.3
°C/W
Electrical Connection
N-Channel
1, 2, 5, 6
1 : Drain
3 2 : Drain
3 : Gate
4 : Source
5 : Drain
4 6 : Drain
Packing Type : TL Marking
ZL
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 3
1
Publication Order Number :
MCH6437/D



MCH6437
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
MCH6437
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=4.5V
ID=2A, VGS=2.5V
ID=1A, VGS=1.8V
VDS=10V, f=1MHz
See specified Test Circuit
VDS=10V, VGS=4.5V, ID=7A
IS=7A, VGS=0V
min
20
Value
typ
0.4
6.2
18
25
38
660
125
100
9.7
53
72
65
8.4
1.0
2.4
0.81
max
1
±10
1.3
24
35
65
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
4.5V
0V
PW=10μs
D.C.≤1%
VIN
G
VDD=10V
ID=4A
RL=2.5Ω
D VOUT
P.G 50Ω
S MCH6437
www.onsemi.com
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)