NTMFS4927N

NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA TA = 25°C TA = 100°C VDSS VGS ID 30 ±20 13.6 8.6 V V A Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s TA = 25°C TA = 25°C TA = 100°C PD ID 2.70 W 20.4 A 12.9 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain C(Nuortreen2t)RqJA Steady State TA = 25°C TA = 25°C TA = 100°C PD ID 6.04 W 7.9 A 5.0 Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC TA = 25°C TC = 25°C TC =100°C PD ID 0.92 W 38 A 24 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C TA = 25°C, tp = 10 ms PD IDM 20.8 W 160 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V, IL = 20 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDmax TTSJT,G IS dV/dt EAS TL 100 −55 to +150...