Power MOSFET
CPH6347
Power MOSFET –20V, 39mΩ, –6A, Single P-Channel
www.onsemi.com
Features
• Low Gate Drive Voltage • ESD Diode-Pr...
Description
CPH6347
Power MOSFET –20V, 39mΩ, –6A, Single P-Channel
www.onsemi.com
Features
Low Gate Drive Voltage ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance
VDSS −20V
RDS(on) Max 39mΩ@ −4.5V 66mΩ@ −2.5V 102mΩ@ −1.8V
ID Max −6A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage Gate to Source Voltage Drain Current (DC)
VDSS VGSS ID
Drain Current (Pulse) PW≤10μs, duty cycle≤1%
IDP
Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm)
Junction Temperature
PD Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm)
Symbol RθJA
Value −20 ±12 −6
−24
Unit V V A
A
1.6
150 −55 to +150
W
°C °C
Value
Unit
78.1
°C/W
Electrical Connection
P-Channel
1, 2, 5, 6
1 : Drain 3 2 : Drain
3 : Gate 4 : Source 5 : Drain 4 6 : Drain
Packing Type : TL
Marking
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
YZ
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 2
1
Publication Order Number : CPH6347/D
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current ...
Similar Datasheet