NTD4979N

NTD4979N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 100°C VDSS VGS ID 30 ±20 12.7 9.0 V V A Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Steady State TA = 25°C TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC = 100°C PD ID PD ID 2.56 W 9.4 A 6.6 1.38 W 41 A 29 Power Dissipation RqJC (Note 1) TC = 25°C PD 26.3 W Pulsed Drain Current tp=10ms TA = 25°C IDM 150 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 19 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDmaxPkg TJ, TSTG IS dV/dt EAS 40 −55 to +175 24 6.0 18 A °C A V/ns mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these...