MCH3383

MCH3383 Power MOSFET –12V, 69mΩ, –3.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance 0.9V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Typical Applications LED Current Balance SW Load Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS −12 V Gate to Source Voltage VGSS ±5 V Drain Current (DC) ID −3.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −14 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD 1.0 W Junction Temperature Tj 150 °C Operating Temperature Topr −5 to +150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value Unit 125 °C/W www.onsemi.com VDSS −12V RDS(on) Max 69mΩ@ −2.5V 98mΩ@ −1.8V 173mΩ@ −1.2V 500mΩ@ −0.9V ID Max −3.5A ELECTRICAL CONNECTION P-Channel 3 1 1 : Gate 2 : Source 3 : Drain 2 ...