High Voltage IGBT
High Voltage IGBT
IXGH 32N170A IXGT 32N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 32 A = 5.0 V = 50 ns
Symbol
Test...
Description
High Voltage IGBT
IXGH 32N170A IXGT 32N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 32 A = 5.0 V = 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
tSC
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
1700 1700
±20 ±30
TC = 25°C TC = 90°C TC = 25°C, 1 ms
32 21 110
VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load
ICM = 70 @ 0.8 VCES
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω
10
V V V V A A A A
µs
PC TC = 25°C
TJ TJM Tstg
350
-55 ... +150 150
-55 ... +150
W
°C °C °C
Md Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247 TO-268
300
6 4
°C
g g
Symbol
BVCES VGE(th) ICES IGES VCE(sat)
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V IC = 250 µA, VCE = VGE
1700 3.0
V 5.0 V
VCE = 0.8 VCES VGE = 0 V
TJ = 25°C Note 1 TJ = 125°C
50 µA 2 mA
VCE = 0 V, VGE = ±20 V
±100 nA
IC = IC90, VGE = 15 V
TJ = 25°C TJ = 125°C
4.0 5.0 V 4.8 V
TO-268 (IXGT)
G E
TO-247 AD (IXGH)
C (TAB)
G CE
G = Gate, E = Emitter,
C = Collector, TAB = Collector
C (TAB)
Features z International standard packages
JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification
Applications z Capacitor discharge & pulser circuit...
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