IXGT32N170A

High Voltage IGBT IXGH 32N170A IXGT 32N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 32 21 110 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 V V V V A A A A µs PC TC = 25°C TJ TJM Tstg 350 -55 ... +150 150 -55 ... +150 W °C °C °C Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 300 6 4 °C g g Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 250 µA, VGE = 0 V IC = 250 µA, VCE = VGE 1700 3.0 V 5.0 V VCE = 0.8 VCES VGE = 0 V TJ = 25°C Note 1 TJ = 125°C 50 µA 2 mA VCE = 0 V, VGE = ±20 V ±100 nA IC = IC90, VGE = 15 V TJ = 25°C TJ = 125°C 4.0 5.0 V 4.8 V TO-268 (IXGT) G E TO-247 AD (IXGH) C (TAB) G CE G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Features z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuit...