High Voltage IGBT
High Voltage IGBT
VCES
IXGP 2N100 1000 V IXGP 2N100A 1000 V
IC90
2.0 A 2.0 A
VCE(SAT)
2.7 V 3.5 V
Symbol
VCES VCGR
...
Description
High Voltage IGBT
VCES
IXGP 2N100 1000 V IXGP 2N100A 1000 V
IC90
2.0 A 2.0 A
VCE(SAT)
2.7 V 3.5 V
Symbol
VCES VCGR
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
Continuous Transient
TC = 25°C TC = 90°C TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 150W Clamped inductive load
PC
TJ TJM TSTG Weight
TC = 25°C
Max. Lead Temperature for Soldering (1.6mm from case for 10s)
Maximum Ratings
1000
V
1000
V
±20 V ±30 V
4 2 8
ICM = 6 @ 0.8 VCES
25
-55 ... +150 150
-55 ... +150
4
300
A A A A
W °C °C °C
g °C
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values Min. Typ. Max.
BVCES
IC = 25µA, VGE = 0 V
1000
V
VGE(th)
IC = 25µA, VCE = VGE
2.5 5.0 V
ICES VCE = 0.8 VCES VGE = 0 V
TJ = 25°C TJ = 125°C
10 µA 200 µA
IGES VCE = 0 V, VGE = ±20 V
+ 50 nA
VCE(sat)
IC = IC90, VGE = 15 V
IXGP2N100 IXGP2N100A
2.7 V 3.5 V
TO-220
1 2 3
1 = Gate 3 = Emitter
4
2 = Collector 4 = Collector
Features
International standard package Low VCE(sat)
- for low on-state conduction losses
High current handling capability MOS Gate turn-on
- drive simplicity
Applications
Capacitor discharge Anode triggering of thyristors DC choppers Switched-mode and resonant-mode
power supplies.
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95514C (9/00)
IXGP 2N100 IXGP 2N100A
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs IC = IC90, VCE = 10 V, Pulse test, t < 300 µs, duty cycle < 2...
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