IXGP20N120B

High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 Preliminary Data Sheet VCES IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 3.4 V = 160 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg Md Mounting torque (M3.5 screw) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight D1 Maximum Ratings 1200 1200 V V ±20 V ±30 V 40 A 20 A 100 A ICM = 40 @0.8 VCES 190 A W -55 ... +150 150 -55 ... +150 °C °C °C 0.55/5 Nm/lb.in. 300 °C 260 °C 4g TO-220 (IXGP) GC E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z Saves space (two devices in one package) z Easy to mount with 1 screw z Reduces assembly time and cost Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20N120B 20N120BD1 2.5 5.0 V 50 µA 150 µA TJ=125°C ±100 nA 2.9 3.4 V 2.8 ...