Voltage IGBT. IXGP20N120BD1 Datasheet

IXGP20N120BD1 IGBT. Datasheet pdf. Equivalent

Part IXGP20N120BD1
Description High Voltage IGBT
Feature High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 Preliminary Data Sheet VCES IC25 VCE(sat) .
Manufacture IXYS
Datasheet
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IXGP20N120BD1
High Voltage IGBT with Diode
IXGP 20N120B
IXGP 20N120BD1
Preliminary Data Sheet
VCES
IC25
VCE(sat)
tfi(typ)
= 1200 V
= 40 A
= 3.4 V
= 160 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 10
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
Md Mounting torque (M3.5 screw)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
Weight
D1
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
40 A
20 A
100 A
ICM = 40
@0.8 VCES
190
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
0.55/5 Nm/lb.in.
300 °C
260 °C
4g
TO-220 (IXGP)
GC E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z International standard package
z IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
z MOS Gate turn-on
- drive simplicity
z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Advantages
z Saves space (two devices in one
package)
z Easy to mount with 1 screw
z Reduces assembly time and cost
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 20A, VGE = 15 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
20N120B
20N120BD1
2.5
5.0 V
50 µA
150 µA
TJ=125°C
±100 nA
2.9 3.4 V
2.8 V
© 2003 IXYS All rights reserved
DS99138(12/03)



IXGP20N120BD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = 20A; VCE = 10 V,
Note 2.
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 20 A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 10
Note 1.
Inductive load, TJ = 125°C
IC = 20A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 10
Note 1
12 18
1700
20N120B
95
20N120BD1 105
39
72
12
27
25
15
150
160
2.1
25
18
1.4
270
360
3.5
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
280 ns
320 ns
3.5 mJ
ns
ns
mJ
ns
ns
mJ
0.65 K/W
0.25
K/W
IXGP 20N120B
IXGP 20N120BD1
TO-220 Outline
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF
IRM
trr
trr
RthJC
IF = 10 A, VGE = 0 V
TC = 90°C
IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V
VGE = 0 V; TJ = 125°C
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
3.3 V
10 A
14 A
120 ns
40 ns
2.5 K/W
Notes: 1.
2.
Switching times may increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG.
Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343





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