Voltage IGBT. IXGT10N170 Datasheet

IXGT10N170 IGBT. Datasheet pdf. Equivalent


Part IXGT10N170
Description High Voltage IGBT
Feature High Voltage IGBT IXGH10N170 IXGT10N170 VCES = IC90 = VCE(sat) ≤ 1700V 10A 4.0V TO-247 (IXGH) S.
Manufacture IXYS
Datasheet
Download IXGT10N170 Datasheet

High Voltage IGBT IXGH10N170 IXGT10N170 VCES = IC90 = VCE( IXGT10N170 Datasheet
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Recommendation Recommendation Datasheet IXGT10N170 Datasheet




IXGT10N170
High Voltage
IGBT
IXGH10N170
IXGT10N170
VCES =
IC90 =
VCE(sat)
1700V
10A
4.0V
TO-247 (IXGH)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 16Ω
Clamped inductive load
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = 0.8 • VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = IC90, VGE = 15V, Note 1 TJ = 125°C
Maximum Ratings
1700
V
1700
V
± 20 V
± 30 V
20 A
10 A
70 A
ICM = 20
@ 0.8 • VCES
110
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
6g
4g
Characteristic Values
Min. Typ. Max.
1700
V
3.0 5.0 V
50 μA
500 μA
±100 nA
2.7 4.0 V
3.4
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
Advantages
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2008 IXYS CORPORATION, All rights reserved
DS98992A(10/08)



IXGT10N170
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
IC(ON)
IC = 10A, VCE = 10V, Note 1
VCE = 10V, VGE = 10V
Cies
Coes
Cres
Qg
Qge
Qgc
VCE = 25V, VGE = 0V, f = 1MHz
IC = 10A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tr
td(off)
tf
Resistive load, TJ = 25°C
IC = 10A, VGE = 15V
VCE = 850V, RG = 16Ω
td(on)
tri
td(off)
tfi
Resistive load, TJ = 125°C
IC = 10A, VGE = 15V
VCE = 850V, RG = 16Ω
RthJC
RthCS
(TO-247)
Characteristic Values
Min. Typ. Max.
3.8 6.3
33
S
A
700 pF
40 pF
14 pF
32 nC
4 nC
16 nC
30 ns
69 ns
132 ns
600 ns
30 ns
270 ns
135 ns
495 ns
1.1 °C/W
0.25 °C/W
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
IXGH10N170
IXGT10N170
TO-247 AD Outline
123
Terminals: 1 - Gate
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
2 - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-268 Outline
Min Recommended Footprint
Terminals: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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