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IXGH35N120B Dataheets PDF



Part Number IXGH35N120B
Manufacturers IXYS
Logo IXYS
Description IGBT
Datasheet IXGH35N120B DatasheetIXGH35N120B Datasheet (PDF)

Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B VCES = IC2 = VCE(sat) = =tfi(typ) 1200 V 70 A 3.3 V 160 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 1200 1200 V GES VGEM Continuous Transient ±20 ±30 IC25 TC = 25°C IC90 TC = 90°C ICM TC = 25°C, 1 ms 70 35 140 SSOA (RBSOA) V= GE 15 V, T VJ = 125°C, R G = 5 W Clamped inductive load I = 90 CM @ 0.8 VCES P C T C = 25°C 300 TJ -55 ... +15.

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Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B VCES = IC2 = VCE(sat) = =tfi(typ) 1200 V 70 A 3.3 V 160 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 1200 1200 V GES VGEM Continuous Transient ±20 ±30 IC25 TC = 25°C IC90 TC = 90°C ICM TC = 25°C, 1 ms 70 35 140 SSOA (RBSOA) V= GE 15 V, T VJ = 125°C, R G = 5 W Clamped inductive load I = 90 CM @ 0.8 VCES P C T C = 25°C 300 TJ -55 ... +150 T 150 JM Tstg -55 ... +150 Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 300 260 V V V V A A A A W °C °C °C °C °C M d Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g TO-268 (IXGT) G E TO-247 AD (IXGH) C (TAB) G CE C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Features • International standard packages JEDEC TO-268 and JEDEC TO-247 AD • Low switching losses, low V (sat) • MOS Gate turn-on - drive simplicity Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions IC = 1 mA, VGE = 0 V IC = 750 mA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. T= J 25°C TJ = 125°C TJ = 125°C 1200 2.5 V 5V 250 mA 5 mA ±100 nA 3.3 V 2.7 V Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies Advantages • High power density • Suitable for surface mounting • Easy to mount with 1 screw, (isolated mounting screw hole) IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 98665 (11/99) 1-2 IXGH 35N120B IXGT 35N120B Symbol gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C I = I , V = 15 V C C90 GE VCE = 0.8 VCES, RG = Roff = 5 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C I = I , V = 15 V C C90 GE VCE = 0.8 VCES, RG = Roff = 5 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 30 40 S 4620 260 90 170 28 57 50 27 180 160 3.8 55 31 2.6 300 360 8.0 pF pF pF nC nC nC ns ns 280 ns 320 ns 7.3 mJ ns ns mJ ns ns mJ 0.42 K/W (TO-247) (TO-268) 0.25 K/W 0.3 K/W TO-247 AD (IXGH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-268AA (D3 PAK) © 2000 IXYS All rights reserved Min. Recommended Footprint Dim. Millimeter Min. Max. A 4.9 5.1 A1 2.7 2.9 A2 .02 .25 b 1.15 1.45 b2 1.9 2.1 C .4 .65 D 13.80 14.00 E 15.85 16.05 E1 13.3 13.6 e 5.45 BSC H 18.70 19.10 L 2.40 2.70 L1 1.20 1.40 L2 1.00 1.15 L3 0.25 BSC L4 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 .


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