IGBT. IXGT40N60C Datasheet

IXGT40N60C IGBT. Datasheet pdf. Equivalent


Part IXGT40N60C
Description IGBT
Feature HiPerFASTTM IGBT LightspeedTM Series Preliminary Data IXGH 40N60C IXGT 40N60C V CES IC25 VCE(sat) .
Manufacture IXYS
Datasheet
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IXGT40N60C
HiPerFASTTM IGBT
LightspeedTM Series
Preliminary Data
IXGH 40N60C
IXGT 40N60C
V
CES
IC25
VCE(sat)
tfi typ
= 600 V
= 75 A
= 2.5 V
= 75 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (M3)
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
40 A
150 A
ICM = 80
@ 0.8 VCES
250
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
TO-247 AD
6
TO-268 SMD 4
g
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC110, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
TJ = 25°C
TJ = 150°C
2.5 5 V
200 µA
1 mA
±100 nA
2.1 2.5 V
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z International standard packages
JEDEC TO-247 and surface
mountable TO-268
z High current handling capability
z Latest generation HDMOSTM process
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2003 IXYS All rights reserved
DS98802A(01/03)



IXGT40N60C
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC = IC110; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
(IXGH40N60C)
30 40
S
3300
310
65
pF
pF
pF
116 nC
23 nC
55 nC
25 ns
30 ns
100 150 ns
75 150 ns
0.85 1.7 mJ
25 ns
35 ns
0.40 mJ
50 ns
105 ns
1.2 mJ
0.50 K/W
0.25 K/W
IXGH 40N60C
IXGT 40N60C
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 2.2 2.54
1
A 2.2 2.6
2
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025





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