IXSH45N120

High Voltage, Low VCE(sat) IGBT Short Circuit SOA Capability IXSH 45N120 VCES IC25 VCE(sat) = 1200 V = 75 A = 3V Symbol Test Conditions V CES VCGR VGES VGEM IC25 I C90 ICM SSOA (RBSOA) T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads T C = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, L = 30 mH tSC (SCSOA) PC TJ TJM Tstg M d Weight VGE= 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1200 1200 ±20 ±30 75 45 180 ICM = 90 @ 0.8 V CES 10 V V V V A A A A ms 300 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 6g 300 °C Symbol BV CES VGE(th) ICES I GES VCE(sat) Test Conditions I = 3 mA, V = 0 V C GE IC = 4 mA, VCE = VGE VCE = 0.8 VCES VGE = 0 V V CE = 0 V, V GE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 6 V 8V TJ = 25°C TJ = 125°C 400 mA 1.2 mA ±100 nA 3V TO-247 AD G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features q International standard package JEDEC TO-247 q High frequency IGBT with guaranteed Short Circuit SOA capability q Fast Fall Time for switching speeds up to 20 kHz q 2nd generation HDMOSTM process q Low V CE(sat) - for minimum on-state conduction losses q MOS Gate turn-on - drive simplicity Applications q A...