High Speed IGBT
High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B VCES = IXST 40N60B IC25 =
VCE(sat) =
tfi typ
=
600V 75A 2.2...
Description
High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B VCES = IXST 40N60B IC25 =
VCE(sat) =
tfi typ
=
600V 75A 2.2V
100 ns
Preliminary data
Symbol
Test Conditions
VCES VCGR
VGES V
GEM
IC25 IC90 ICM
SSOA (RBSOA)
tSC (SCSOA)
PC
TJ T
JM
Tstg
Md
Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient
TC = 25°C TC = 90°C TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES
VGE= 15 V, VCE = 360 V, TJ = 125°C
R G
=
22
W,
non
repetitive
TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 600
±20 ±30
75 40 150
ICM = 80 @ 0.8 VCES
10
V V V V A A A A
ms
280 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
6g
300 °C
Symbol
BVCES VGE(th) ICES
I GES
VCE(sat)
Test Conditions
IC = 250 mA, VGE = 0 V IC = 4 mA, VCE = VGE
VCE = 0.8 VCES VGE = 0 V
V CE
=
0
V,
V GE
=
±20
V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
TJ = 25°C TJ = 125°C
600 4
V 7V
25 mA 1 mA
±100 nA
2.2 V
TO-247 AD (IXSH)
G C E
TO-268 (D3) ( IXST)
(TAB)
G E
(TAB)
G = Gate E = Emitter
TAB = Collector
Features
International standard packages Guaranteed Short Circuit SOA
capability Low VCE(sat)
- for low on-state conduction losses High current handling capability MOS Gate turn-on
- drive simplicity Fast Fall Time for switching speeds
up to 50 kHz
Applications
AC and DC mo...
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