High Voltage IGBT
High Voltage IGBT
Low VCE(sat)
Preliminary Data Sheet
IXGH 40N120A2 IXGT 40N120A2
IXGH 40N120A2 IXGT 40N120A2
V = 120...
Description
High Voltage IGBT
Low VCE(sat)
Preliminary Data Sheet
IXGH 40N120A2 IXGT 40N120A2
IXGH 40N120A2 IXGT 40N120A2
V = 1200
I CES = 75
V ≤C25 CE(sat)
2.0
V A V
Symbol Test Conditions
Maximum Ratings
VCES VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA)
PC TJ TTJsMtg TL
TSOLD Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transient TC = 25°C, IGBT chip capability TC = 110°C TJ ≤ 150°C, tp < 300 μs VGE = 15 V, TVJ = 150°C, RG = 5 Ω Clamped inductive load, VCE < 960 V TC = 25°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 seconds Plastic body for 10 seconds Mounting torque (ixgh)
(IXGH) (IXGT)
1200 1200
± 20 ± 30
75 40 160
ICM = 80
V V
V V
A A A
A
360
-55 ... +150 150 -55 ... +150
300
W
°C °C °C
°C
260 °C 1.3/10 Nm/lb.in.
6.0 g 4.0 g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VGE(th) VGE(th)
IC = 1 mA, VGE = 0 V IC = 250 μA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC110, VGE = 15V
Characteristic Values Min. Typ. Max.
1200 3.0
V 5.0 V
TJ = 125°C
50 μA 1mA
± 100 nA
2.0 V
TO-247 (IXFH)
G CE
(TAB)
TO-268 (IXGT)
G = Gate E = Emitter
G E
C = Collector TAb = Collector
C (TAB)
Features
International standard packages Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode
p...
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