300V IGBT. IXGN400N30A3 Datasheet

IXGN400N30A3 IGBT. Datasheet pdf. Equivalent

Part IXGN400N30A3
Description 300V IGBT
Feature GenX3TM 300V IGBT IXGN400N30A3 Ultra-Low-Vsat PT IGBT for up to 10kHz Switching Symbol VCES VCGR .
Manufacture IXYS
Datasheet
Download IXGN400N30A3 Datasheet

GenX3TM 300V IGBT IXGN400N30A3 Ultra-Low-Vsat PT IGBT for IXGN400N30A3 Datasheet
Recommendation Recommendation Datasheet IXGN400N30A3 Datasheet




IXGN400N30A3
GenX3TM 300V IGBT
IXGN400N30A3
Ultra-Low-Vsat PT IGBT for
up to 10kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ILRMS
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
TC = 110°C
Terminal Current Limit
TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
50/60Hz
t = 1min
IISOL 1mA
t = 1s
Mounting Torque
Terminal Connection Torque (M4)
E
Maximum Ratings
300 V
300 V
±20 V
±30 V
400
200
200
1200
A
A
A
A
ICM = 400
@ 0.8 • VCES
735
A
V
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
IGES VCE = 0V, VGE = ±20V
TJ = 125°C
VCE(sat)
IC = 100A, VGE = 15V, Note 1
IC = 400A
Characteristic Values
Min. Typ. Max.
300 V
3.0 5.0 V
50 μA
2 mA
±400 nA
1.15 V
1.70 V
VCES =
IC25 =
VCE(sat)
300V
400A
1.15V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
cEither Emitter Terminal Can Be Used
as Main or Kelvin Emitter
Features
z Optimized for Low Conduction Losses
z High Current Capability
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
© 2009 IXYS CORPORATION, All Rights Reserved
DS99592B(7/09)



IXGN400N30A3
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 100V, VGE = 15V, VCE = 0.5 • VCES
td(on)
tr
td(off)
tf
Resistive Load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 0.8 • VCES, RG = 1Ω
td(on)
tr
td(off)
tf
Resistive Load, TJ = 125°C
IC = 100A, VGE = 15V
VCE = 0.8 • VCES, RG = 1Ω
RthJC
RthCK
Characteristic Values
Min. Typ. Max.
100 170
S
19
1350
190
nF
pF
pF
560 nC
83 C
185 nC
45 ns
45 ns
210 ns
107 ns
47 ns
53 ns
240 ns
315 ns
0.17 °C/W
0.05 °C/W
IXGN400N30A3
SOT-227B miniBLOC (IXGN)
Note 1. Pulse test, t 300μs; duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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