High-Voltage IGBT
HIGH Voltage IGBT
IXSH 15N120B IXST 15N120B
"S" Series - Improved SCSOA Capability
IC25 VCES VCE(sat)
= 30 A = 1200 ...
Description
HIGH Voltage IGBT
IXSH 15N120B IXST 15N120B
"S" Series - Improved SCSOA Capability
IC25 VCES VCE(sat)
= 30 A = 1200 V = 3.4 V
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VCES VCGR
V GES
VGEM
IC25 IC90 ICM
SSOA (RBSOA)
tSC
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient
1200 1200
±20 ±30
TC = 25°C TC = 90°C TC = 25°C, 1 ms
30 15 60
V= GE
15
V,
T J
=
125°C,
R G
=
10
W
Clamped inductive load
I = 40
CM
@ 0.8 VCES
TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive
10
V V V V A A A A
ms
PC TC = 25°C
T J
TJM T
stg
Md Mounting torque
(TO-247)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268)
150 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
300 °C
260 °C
Weight
TO-247 TO-268
6g 4g
Symbol
BVCES V
GE(th)
ICES
I GES
V CE(sat)
Test Conditions
IC = 1.0 mA, VGE = 0 V
I
C
=
250
mA,
V CE
=
V GE
VCE = 0.8 VCES Note 1
V CE
=
0
V,
V GE
=
±20
V
I = I V = 15 V
C C90, GE
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
TJ = 125°C TJ = 125°C
1200 3
V 6V
50 mA 2.5 mA
±100 nA
3.0 3.4 V 2.8 V
TO-247 AD (IXSH)
G C E
TO-268 (IXST) G E
(TAB) (TAB)
Features
High Blocking Voltage Epitaxial Silicon drift region
- fast switching - small tail current - low switching losses MOS gate turn-on for drive simplicity Molding epoxies meet UL 94 V-0 flammability classificati...
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