IGBT phaseleg
IGBT phaseleg
in ISOPLUS i4-PAC™
FII 40-06D
IC25 = 40 A VCES = 600 V VCE(sat) typ. = 1.8 V
3
5 4
1 E72873
2
I...
Description
IGBT phaseleg
in ISOPLUS i4-PAC™
FII 40-06D
IC25 = 40 A VCES = 600 V VCE(sat) typ. = 1.8 V
3
5 4
1 E72873
2
IGBT Symbol VCES VGES
IC25 IC90 ICM VCEK tSC (SCSOA) Ptot
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = ±15 V; RG = 33 Ω; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 33 Ω TVJ = 125°C; non-repetitive TC = 25°C
Maximum Ratings 600 V ± 20 V
40 25
60 VCES
10
A A A
µs
125 W
Symbol
VCE(sat)
VGE(th) ICES
IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 25 A; VGE = 15 V IC = 0.7 mA; VGE = VCE VCE = VCES; VGE = 0 V VCE = 0 V; VGE = ± 20 V
TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C
Inductive load VCE = 300 V; IC = 25 A VGE = ±15 V; RG = 33 Ω
TVJ = 125°C
1.8 2.0 4.5
0.6
50 50 270 40 1.2 0.8
2.2 V V
6.5 V
0.6 mA mA
200 nA
ns ns ns ns mJ mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 30 A
with heatsink compound
1.6 nF
95 nC
1 K/W 2 K/W
Features
NPT IGBT technology - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching HiPerFRED™ diode - optimized fast and soft reverse recovery - low operating forward voltage - low leakage current ISOPLUS i4-PAC™ package - isolated back surface - low coupling capacity between pins
and heatsink - enlarged creepage towards heatsink - application friendly pinout - low in...
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