High Voltage IGBT
High Voltage IGBT
IXSH 45N120B IXST 45N120B
"S" Series - Improved SCSOA Capability
IC25 VCES VCE(sat)
= 75 A = 1200 ...
Description
High Voltage IGBT
IXSH 45N120B IXST 45N120B
"S" Series - Improved SCSOA Capability
IC25 VCES VCE(sat)
= 75 A = 1200 V = 3.0 V
Preliminary data
Symbol
V CES
VCGR VGES VGEM IC25 I
C90
ICM SSOA (RBSOA)
tSC
Test Conditions
Maximum Ratings
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
1200 1200
±20 ±30
TC = 25°C (limited by leads)
T C
= 90°C
TC = 25°C, 1 ms
75 45 180
VGE= 15 V, TJ = 125°C, RG = 5 W Clamped inductive load
ICM = 90 @ 0.8 V
CES
TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 5 W
10
V V V V A A A A
ms
PC TC = 25°C TJ TJM Tstg M Mounting torque
d
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Weight
(TO-247) TO-247
300 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
300 °C
6g
Symbol
BV CES
VGE(th) ICES
IGES VCE(sat)
Test Conditions
I = 1.0 mA, V = 0 V
C GE
IC = 250 mA, VCE = VGE VCE = 0.8 VCES Note 1 VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
TJ = 125°C TJ = 125°C
1200 3
V 6V
50 mA 2.5 mA
±100 nA
2.5 3.0 V 2.6 V
TO-247 AD (IXSH)
G C E
TO-268 ( IXST)
(TAB)
G E
(TAB)
G = Gate S = Emitter
C = Collector TAB = Collector
Features
Epitaxial Silicon drift region - fast switching - small tail current
MOS gate turn-on for drive simplicity
Applications
AC motor speed control DC servo and robot drives Uninterruptible power supplies (UPS) Switched-mode and resonant-mode
power...
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