Power MOSFET. IXFR14N80 Datasheet

IXFR14N80 MOSFET. Datasheet pdf. Equivalent

Part IXFR14N80
Description Power MOSFET
Feature HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab) N-Channel Enhancement M.
Manufacture IXYS
Datasheet
Download IXFR14N80 Datasheet

HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrical IXFR14N80 Datasheet
Recommendation Recommendation Datasheet IXFR14N80 Datasheet




IXFR14N80
HiPerFETTM Power MOSFETs IXFR 14N80
IsoPlus247TM
(Electrically Isolated Tab)
N-Channel Enhancement Mode
High dv/dt, Low t , HDMOSTM Family
rr
V = 800
DSS
ID25 = 14
=RDS(on) 0.7
V
A
trr 250 ns
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
PD
T
J
TJM
T
stg
TL
VISOL
Weight
Symbol
VDSS
V
GS(th)
IGSS
IDSS
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute leads-to-tab
Maximum Ratings
800 V
800 V
±20 V
±30 V
14 A
56 A
14 A
45 mJ
5 V/ns
ISOPLUS 247
Isolated mounting tab*
G = Gate
S = Source
D = Drain
* Patent pending
250
-55 ... +150
150
-55 ... +150
300
2500
6
W
°C Features
°C z Isolated mounting tab
°C z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
°C z Unclamped Inductive Switching (UIS)
V rated
z Low drain to tab capacitance(<25pF)
g z Fast intrinsic Rectifier
Test Conditions
VGS = 0 V, ID = 3 mA
V = V , I = 4 mA
DS GS D
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
800
2
TJ = 25°C
TJ = 125°C
V
4.5 V
±100 nA
250 µA
1 mA
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2002 IXYS All rights reserved
DS98528A(12/02)



IXFR14N80
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t 300 µs, duty cycle d 2 %
gfs VDS = 10 V; ID = 0.5 ID25, pulse test
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
t
d(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
R
G
= 2 (External)
Qg(on)
Qgs
Qgd
RthJC
RthCK
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Characteristic Values
Min. Typ.
Max.
0.7
8 14
4200
360
100
20
33
63
32
128
30
55
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.50 K/W
K/W
IXFR 14N80
ISOPLUS 247 OUTLINE
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
ISM Repetitive;
pulse width limited by T
JM
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
trr
IF = IS
-di/dt = 100 A/µs,
QRM VR = 100 V
IRM
TJ = 25°C
T
J
=
125°C
TJ = 25°C
TJ = 25°C
14 A
56 A
1.5 V
250 ns
400 ns
1 µC
8.5 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025





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