IXGY2N120

Preliminary Data Sheet High Voltage IGBT IXGY 2N120 VCES 1200 V IC90 2.0 A VCE(SAT) 3V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM IC25 IC90 ICM SSOA (RBSOA) Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150Ω Clamped inductive load PC TJ TJM TSTG Weight TC = 25°C Max. Lead Temperature for Soldering (1.6mm from case for 10s) Maximum Ratings 1200 V 1200 V ±20 V ±30 V 5 2 8 ICM = 6 @ 0.8 VCES 25 -55 ... +150 150 -55 ... +150 0.8 300 A A A A W °C °C °C g °C TO-252 AA (IXGY) G E G = Gate E = Emitter C (TAB) C = Collector TAB = Collector Features International standard package Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES VGE(th) ICES IGES VCE(sat) IC = 25µA, VGE = 0 V IC = 25µA, VCE = VGE VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V IC = IC25, VGE = 15 V 1200 2.5 TJ = 25°C TJ = 125°C 2.5 3.8 V 5.0 V 10 µA 200 µA ± 50 nA 3.0 V 4.5 V IC = IC25, T = 125oC 4.5 V Capacitor discharge Anode triggering of thyristors DC choppers Switched-mode and resonant-mode power supplies. © 2002 IXYS All rights reserved DS 98959 (10/02) IXGY 2N120 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs IC = IC90, VCE = 15 V, Pulse test...